Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rds On Max Id Vgs
- 4.2m Ω @ 40A, 10V
- Power Dissipation Max
- 70W Tc
- Çalışma Sıcaklığı
- 175°C TJ
- Kurşunsuz
- Lead Free
- Vgsth Max Id
- 2.5V @ 250μA
- Fet Type
- N-Channel
- Reach Svhc
- No SVHC
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Breakdown Voltage
- 30V
- Avalanche Energy Rating Eas
- 150 mJ
- Uzunluk
- 6.6mm
- Montaj Tipi
- Surface Mount
- RoHS Durumu
- ROHS3 Compliant
- Pin Sayısı
- 3
- Radyasyon Dayanımı
- No
- Gate Charge Qg Max Vgs
- 20nC @ 4.5V
- Ambalaj
- Tape & Reel (TR)
- Current Continuous Drain Id25
- 80A Tc
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
- Case Connection
- DRAIN
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Transistor Application
- SWITCHING
- JESD-609 Kodu
- e3
- Fall Time Typ
- 23.4 ns
- Gate To Source Voltage Vgs
- 20V
- Threshold Voltage
- 1V
- Rise Time
- 91ns
- Parça Durumu
- Obsolete
- Yükseklik
- 2.4mm
- Turn On Delay Time
- 19 ns
- Element Configuration
- Single
- Vgs Max
- ±20V
- Pin Sayısı
- 3
- ECCN Kodu
- EAR99
- Terminal Kaplaması
- Matte Tin (Sn)
- Montaj
- Surface Mount
- Tepe Reflow Sıcaklığı (°C)
- 260
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