Volume pricing
- 1+ pcs$1.77
- 10+ pcs$1.67
- 100+ pcs$1.58
- 500+ pcs$1.49
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Rds On Max Id Vgs
- 1.05 Ω @ 3.25A, 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Nominal Vgs
- 4 V
- Terminal
- SMD/SMT
- Vgsth Max Id
- 5V @ 250μA
- Kurşunsuz
- Lead Free
- Pulsed Drain Currentmax Idm
- 26A
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Power Dissipation Max
- 90W Tc
- Drain To Source Breakdown Voltage
- 800V
- Operating Mode
- ENHANCEMENT MODE
- Reach Svhc
- No SVHC
- Fet Type
- N-Channel
- Fabrika Tedarik Süresi
- 16 Weeks
- Montaj Tipi
- Surface Mount
- Uzunluk
- 6.6mm
- Avalanche Energy Rating Eas
- 240 mJ
- Ambalaj
- Tape & Reel (TR)
- Radyasyon Dayanımı
- No
- Gate Charge Qg Max Vgs
- 18nC @ 10V
- Pin Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Transistor Element Material
- SILICON
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current Continuous Drain Id25
- 6.5A Tc
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Number Of Elements
- 1
- Transistor Application
- SWITCHING
- Drive Voltage Max Rds On Min Rds On
- 10V
- Case Connection
- ISOLATED
- JESD-609 Kodu
- e3
- Dual Supply Voltage
- 800V
- Threshold Voltage
- 4V
- Gate To Source Voltage Vgs
- 30V
- Fall Time Typ
- 10 ns
- Element Configuration
- Single
- Turn On Delay Time
- 20 ns
- Parça Durumu
- Active
- Yükseklik
- 2.4mm
- Rise Time
- 8ns
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