STD7N60M2

Specifications

Drain To Source Breakdown Voltage

600V

Operating Mode

ENHANCEMENT MODE

Reach Svhc

No SVHC

Fet Type

N-Channel

Fabrika Tedarik Süresi

16 Weeks

Montaj Tipi

Surface Mount

Uzunluk

6.6mm

Avalanche Energy Rating Eas

99 mJ

Rds On Max Id Vgs

950m Ω @ 2.5A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

4V @ 250μA

Kurşunsuz

Lead Free

Pulsed Drain Currentmax Idm

20A

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

60W Tc

Number Of Elements

1

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN

Ambalaj

Tape & Reel (TR)

Radyasyon Dayanımı

No

Gate Charge Qg Max Vgs

8.8nC @ 10V

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Number Of Channels

1

Transistor Element Material

SILICON

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Current Continuous Drain Id25

5A Tc

Drain Currentmax Abs Id

5A

Element Configuration

Single

Turn On Delay Time

7.6 ns

Yükseklik

2.4mm

Parça Durumu

Active

Rise Time

7.2ns

Contact Plating

Tin

Vgs Max

±25V

Gate To Source Voltage Vgs

25V

Threshold Voltage

3V

Fall Time Typ

15.9 ns

Jesd30 Code

R-PSSO-G2