Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fall Time Typ
- 20 ns
- Power Dissipation Max
- 125W Tc
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Pulsed Drain Currentmax Idm
- 240A
- Vgsth Max Id
- 4V @ 250μA
- Kurşunsuz
- Lead Free
- Gate To Source Voltage Vgs
- 20V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- JESD-609 Kodu
- e3
- Rds On Max Id Vgs
- 19.5m Ω @ 30A, 10V
- Vgs Max
- ±20V
- Pin Sayısı
- 3
- Montaj Tipi
- Surface Mount
- Fet Type
- N-Channel
- Rise Time
- 20ns
- Operating Mode
- ENHANCEMENT MODE
- Parça Durumu
- Active
- Drain To Source Breakdown Voltage
- 100V
- Turn On Delay Time
- 30 ns
- Element Configuration
- Single
- Current Continuous Drain Id25
- 60A Tc
- Terminal Formu
- GULL WING
- Transistor Element Material
- SILICON
- Direnç
- 19.5mOhm
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation
- 125W
- ECCN Kodu
- EAR99
- Terminal Kaplaması
- Matte Tin (Sn) - annealed
- Pin Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Montaj
- Surface Mount
- Tepe Reflow Süresi (maks. sn)
- 30
- Radyasyon Dayanımı
- No
- Gate Charge Qg Max Vgs
- 85nC @ 10V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Ambalaj
- Tape & Reel (TR)
- Seri
- DeepGATE™, STripFET™
- Turn Off Delay Time
- 65 ns
- Temel Parça No
- STD70N
- Drive Voltage Max Rds On Min Rds On
- 10V
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