STD6NK50ZT4

Specifications

Drain To Source Breakdown Voltage

500V

Akım Değeri

5.6A

Operating Mode

ENHANCEMENT MODE

Reach Svhc

No SVHC

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Uzunluk

6.6mm

Rds On Max Id Vgs

1.2 Ω @ 2.8A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Nominal Vgs

3.75 V

Kurşunsuz

Lead Free

Vgsth Max Id

4.5V @ 50μA

Pulsed Drain Currentmax Idm

22.4A

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

90W Tc

Number Of Elements

1

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

10V

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

24.6nC @ 10V

Radyasyon Dayanımı

No

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material

SILICON

Current Continuous Drain Id25

5.6A Tc

Element Configuration

Single

Turn On Delay Time

12 ns

Parça Durumu

Not For New Designs

Yükseklik

2.4mm

Rise Time

23.5ns

Vgs Max

±30V

Pin Sayısı

3

JESD-609 Kodu

e3

Gate To Source Voltage Vgs

30V

Threshold Voltage

3.75V

Fall Time Typ

23 ns

Jesd30 Code

R-PSSO-G2

Genişlik

6.2mm

Input Capacitance Ciss Max Vds

690pF @ 25V