STD60NF55LAT4

Specifications

Gate Charge Qg Max Vgs

40nC @ 5V

Radyasyon Dayanımı

No

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Current Continuous Drain Id25

60A Tc

Number Of Elements

1

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

5V 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

15m Ω @ 30A, 10V

Terminal Pozisyonu

SINGLE

Pulsed Drain Currentmax Idm

240A

Çalışma Sıcaklığı

-55°C~175°C TJ

Power Dissipation Max

110W Tc

Vgsth Max Id

2V @ 250μA

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

Ds Breakdown Voltagemin

55V

Avalanche Energy Rating Eas

400 mJ

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Tepe Reflow Sıcaklığı (°C)

260

Tepe Reflow Süresi (maks. sn)

30

Montaj

Surface Mount

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn) - annealed

Turn Off Delay Time

80 ns

Seri

Automotive, AEC-Q101, SuperFET® II

Power Dissipation

110W

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

1950pF @ 25V

Jesd30 Code

R-PSSO-G2

Drain To Source Voltage Vdss

55V

Temel Parça No

STD60N

Continuous Drain Current Id

60A

Terminal Sayısı

2