STD4NK80Z-1

Specifications

Power Dissipation Max

80W Tc

Additional Feature

AVALANCHE RATED

Fall Time Typ

32 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgsth Max Id

4.5V @ 50μA

Gate To Source Voltage Vgs

30V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

3.5 Ω @ 1.5A, 10V

JESD-609 Kodu

e3

Vgs Max

±30V

Pin Sayısı

3

Montaj Tipi

Through Hole

Fabrika Tedarik Süresi

12 Weeks

Fet Type

N-Channel

Rise Time

12ns

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

800V

Turn On Delay Time

13 ns

Element Configuration

Single

Drain Currentmax Abs Id

3A

Current Continuous Drain Id25

3A Tc

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Transistor Element Material

SILICON

Power Dissipation

80W

ECCN Kodu

EAR99

Terminal Kaplaması

Tin (Sn)

Montaj

Through Hole

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Tepe Reflow Süresi (maks. sn)

30

Radyasyon Dayanımı

No

Tepe Reflow Sıcaklığı (°C)

260

Gate Charge Qg Max Vgs

22.5nC @ 10V

Turn Off Delay Time

35 ns

Seri

SuperMESH™

Ambalaj

Tube

Temel Parça No

STD4N

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3