STD4N80K5

Specifications

Number Of Elements

1

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

10V

Transistor Application

SWITCHING

Number Of Channels

1

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

10.5nC @ 10V

Radyasyon Dayanımı

No

Ambalaj

Cut Tape (CT)

Drain Currentmax Abs Id

3A

Current Continuous Drain Id25

3A Tc

Transistor Element Material

SILICON

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Fet Type

N-Channel

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

800V

Avalanche Energy Rating Eas

74.5 mJ

Uzunluk

6.6mm

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

17 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

2.5 Ω @ 1.5A, 10V

Power Dissipation Max

60W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Kurşunsuz

Lead Free

Vgsth Max Id

5V @ 100μA

Input Capacitance Ciss Max Vds

175pF @ 100V

Genişlik

6.2mm

Jesd30 Code

R-PSSO-G2

Temel Parça No

STD4N

Terminal Sayısı

2

Continuous Drain Current Id

3A

ECCN Kodu

EAR99

Montaj

Surface Mount

Turn Off Delay Time

36 ns

Seri

SuperMESH5™

Terminal Formu

GULL WING

Direnç

2.5Ohm