STD3NK60Z-1

Specifications

Uzunluk

6.6mm

Montaj Tipi

Through Hole

Operating Mode

ENHANCEMENT MODE

Reach Svhc

No SVHC

Fet Type

N-Channel

Drain To Source Breakdown Voltage

600V

Pulsed Drain Currentmax Idm

9.6A

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

45W Tc

Vgsth Max Id

4.5V @ 50μA

Kurşunsuz

Lead Free

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

3.6 Ω @ 1.2A, 10V

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

10V

Number Of Elements

1

Lifecycle Status

ACTIVE (Last Updated: 2 weeks ago)

Transistor Element Material

SILICON

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Current Continuous Drain Id25

2.4A Tc

Radyasyon Dayanımı

No

Gate Charge Qg Max Vgs

11.8nC @ 10V

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Ambalaj

Tube

Vgs Max

±30V

Pin Sayısı

3

Parça Durumu

Not For New Designs

Yükseklik

6.2mm

Rise Time

14ns

Element Configuration

Single

Turn On Delay Time

9 ns

Fall Time Typ

14 ns

Gate To Source Voltage Vgs

30V

Threshold Voltage

3.75V

JESD-609 Kodu

e3

Temel Parça No

STD3N

Continuous Drain Current Id

2.4A

Terminal Sayısı

3

Input Capacitance Ciss Max Vds

311pF @ 25V