STD3N80K5

Specifications

Power Dissipation Max

60W Tc

Fall Time Typ

25 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Kurşunsuz

Lead Free

Vgsth Max Id

5V @ 100μA

Gate To Source Voltage Vgs

30V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

3.5 Ω @ 1A, 10V

Avalanche Energy Rating Eas

65 mJ

Contact Plating

Tin

Uzunluk

6.6mm

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

17 Weeks

Fet Type

N-Channel

Rise Time

7.5ns

Parça Durumu

Active

Yükseklik

2.4mm

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

800V

Turn On Delay Time

8.5 ns

Element Configuration

Single

Terminal Formu

GULL WING

Current Continuous Drain Id25

2.5A Tc

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material

SILICON

Power Dissipation

110W

ECCN Kodu

EAR99

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Gate Charge Qg Max Vgs

9.5nC @ 10V

Radyasyon Dayanımı

No

Ambalaj

Tape & Reel (TR)

Seri

SuperMESH5™

Turn Off Delay Time

20.5 ns

Case Connection

DRAIN

Temel Parça No

STD3N

Terminal Sayısı

2

Drive Voltage Max Rds On Min Rds On

10V

Continuous Drain Current Id

2.5A