STD3N62K3

Specifications

Kurşunsuz

Lead Free

Vgsth Max Id

4.5V @ 50μA

Çalışma Sıcaklığı

150°C TJ

Power Dissipation Max

45W Tc

Rds On Max Id Vgs

2.5 Ω @ 1.4A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

12 Weeks

Montaj Tipi

Surface Mount

Uzunluk

6.6mm

Drain To Source Breakdown Voltage

620V

Operating Mode

ENHANCEMENT MODE

Reach Svhc

No SVHC

Fet Type

N-Channel

Transistor Element Material

SILICON

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Current Continuous Drain Id25

2.7A Tc

Jedec95 Code

TO-252AA

Ambalaj

Tape & Reel (TR)

Radyasyon Dayanımı

No

Gate Charge Qg Max Vgs

13nC @ 10V

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

10V

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Number Of Elements

1

Gate To Source Voltage Vgs

30V

Threshold Voltage

3.75V

Fall Time Typ

15.6 ns

JESD-609 Kodu

e3

Vgs Max

±30V

Pin Sayısı

3

Element Configuration

Single

Turn On Delay Time

9 ns

Parça Durumu

Active

Yükseklik

2.4mm

Rise Time

6.8ns

Power Dissipation

45W

Direnç

2.5Ohm

Terminal Formu

GULL WING