Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Power Dissipation Max
- 100W Tc
- Fall Time Typ
- 15 ns
- Gate To Source Voltage Vgs
- 20V
- Kurşunsuz
- Lead Free
- Vgsth Max Id
- 4V @ 250μA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rds On Max Id Vgs
- 38m Ω @ 12.5A, 10V
- JESD-609 Kodu
- e3
- Avalanche Energy Rating Eas
- 480 mJ
- Vgs Max
- ±20V
- Pin Sayısı
- 3
- Montaj Tipi
- Surface Mount
- Rise Time
- 60ns
- Parça Durumu
- Active
- Operating Mode
- ENHANCEMENT MODE
- Fet Type
- N-Channel
- Element Configuration
- Single
- Drain To Source Breakdown Voltage
- 100V
- Turn On Delay Time
- 17 ns
- Power Dissipation
- 100W
- Current Continuous Drain Id25
- 25A Tc
- Terminal Formu
- GULL WING
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Direnç
- 38MOhm
- Transistor Element Material
- SILICON
- Tepe Reflow Süresi (maks. sn)
- 30
- Gate Charge Qg Max Vgs
- 55nC @ 10V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Radyasyon Dayanımı
- No
- Terminal Kaplaması
- Matte Tin (Sn) - annealed
- ECCN Kodu
- EAR99
- Montaj
- Surface Mount
- RoHS Durumu
- ROHS3 Compliant
- Pin Sayısı
- 3
- Ambalaj
- Tape & Reel (TR)
- Turn Off Delay Time
- 60 ns
- Seri
- STripFET™ II
- Temel Parça No
- STD26N
- Case Connection
- DRAIN
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