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STD18N65M5

STMicroelectronics

STD18N65M5

Single MOSFETs Transistors

In StockRoHS: Compliant

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Compliant

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Specifications

Fabrika Tedarik Süresi
17 Weeks
Drain To Source Breakdown Voltage
650V
Element Configuration
Single
ECCN Kodu
EAR99
Vgsth Max Id
5V @ 250μA
Terminal Formu
GULL WING
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Continuous Drain Current Id
15A
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn On Delay Time
36 ns
Terminal Sayısı
2
Uzunluk
6.6mm
Ambalaj
Tape & Reel (TR)
Parça Durumu
Active
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Montaj Tipi
Surface Mount
Gate To Source Voltage Vgs
25V
Temel Parça No
STD18
Power Dissipation Max
110W Tc
Rise Time
7ns
Input Capacitance Ciss Max Vds
1240pF @ 100V
Rds On Max Id Vgs
220m Ω @ 7.5A, 10V
Power Dissipation
110W
Nem Hassasiyeti (MSL)
1 (Unlimited)
Montaj
Surface Mount
Gate Charge Qg Max Vgs
31nC @ 10V
Number Of Elements
1
Fet Type
N-Channel
Operating Mode
ENHANCEMENT MODE
Seri
MDmesh™ V
Contact Plating
Tin
Tepe Reflow Sıcaklığı (°C)
260
Fall Time Typ
9 ns
Case Connection
DRAIN
RoHS Durumu
ROHS3 Compliant
Current Continuous Drain Id25
15A Tc
Drive Voltage Max Rds On Min Rds On
10V
Direnç
220mOhm
Pulsed Drain Currentmax Idm
60A

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