STD155N3LH6

Specifications

Fet Type

N-Channel

Number Of Elements

1

Gate Charge Qg Max Vgs

80nC @ 5V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj

Surface Mount

Avalanche Energy Rating Eas

525 mJ

Kurşunsuz

Lead Free

Yükseklik

2.4mm

Radyasyon Dayanımı

No

Jesd30 Code

R-PSSO-G2

Vgs Max

±20V

JESD-609 Kodu

e3

Çalışma Sıcaklığı

-55°C~175°C TJ

Direnç

3MOhm

Turn Off Delay Time

100 ns

Genişlik

6.2mm

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

80A Tc

Drive Voltage Max Rds On Min Rds On

5V 10V

Tepe Reflow Sıcaklığı (°C)

260

Fall Time Typ

40 ns

Case Connection

DRAIN

Tepe Reflow Süresi (maks. sn)

30

Operating Mode

ENHANCEMENT MODE

Seri

DeepGATE™, STripFET™ VI

Turn On Delay Time

15 ns

Uzunluk

6.6mm

Terminal Sayısı

2

Additional Feature

ULTRA-LOW RESISTANCE

Transistor Element Material

SILICON

Pin Sayısı

4

Transistor Application

SWITCHING

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current Id

80A

Vgsth Max Id

2.5V @ 250μA

Terminal Formu

GULL WING

Drain To Source Breakdown Voltage

30V

Element Configuration

Single

ECCN Kodu

EAR99