Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Type
- N-Channel
- Number Of Elements
- 1
- Gate Charge Qg Max Vgs
- 30nC @ 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj
- Surface Mount
- Threshold Voltage
- 3V
- Avalanche Energy Rating Eas
- 200 mJ
- Kurşunsuz
- Lead Free
- Yükseklik
- 2.63mm
- Radyasyon Dayanımı
- No
- Jesd30 Code
- R-PSSO-G2
- Vgs Max
- ±25V
- JESD-609 Kodu
- e3
- Çalışma Sıcaklığı
- 150°C TJ
- Direnç
- 360mOhm
- Pulsed Drain Currentmax Idm
- 44A
- Genişlik
- 6.2mm
- Turn Off Delay Time
- 30 ns
- Pin Sayısı
- 3
- Current Continuous Drain Id25
- 11A Tc
- RoHS Durumu
- ROHS3 Compliant
- Number Of Channels
- 1
- Drive Voltage Max Rds On Min Rds On
- 10V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Fall Time Typ
- 10 ns
- Tepe Reflow Süresi (maks. sn)
- 30
- Operating Mode
- ENHANCEMENT MODE
- Seri
- MDmesh™ II
- Turn On Delay Time
- 3 ns
- Uzunluk
- 6.6mm
- Terminal Sayısı
- 2
- Pin Sayısı
- 3
- Transistor Element Material
- SILICON
- Max Junction Temperature Tj
- 150°C
- Transistor Application
- SWITCHING
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Continuous Drain Current Id
- 5.5A
- Vgsth Max Id
- 4V @ 250μA
- Terminal Formu
- GULL WING
- Drain To Source Breakdown Voltage
- 600V
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