STD10P10F6

Specifications

Terminal Sayısı

2

Fet Type

P-Channel

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Number Of Elements

1

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Drain Current Id

10A

Vgsth Max Id

4V @ 250μA

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

16.5nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj

Surface Mount

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

100V

Drain To Source Voltage Vdss

100V

Kurşunsuz

Lead Free

Input Capacitance Ciss Max Vds

864pF @ 80V

Jesd30 Code

R-PSSO-G2

Vgs Max

±20V

Rds On Max Id Vgs

180m Ω @ 5A, 10V

Çalışma Sıcaklığı

175°C TJ

Pulsed Drain Currentmax Idm

40A

Temel Parça No

STD10

Power Dissipation Max

40W Tc

Drive Voltage Max Rds On Min Rds On

10V

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

10A Tc

Case Connection

DRAIN

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Seri

STripFET™ F6

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Ambalaj

Cut Tape (CT)

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Active

Drainsource On Resistancemax

0.18Ohm