Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Elements
- 1
- Fet Type
- N-Channel
- Avalanche Energy Rating Eas
- 200 mJ
- Threshold Voltage
- 3V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj
- Surface Mount
- Gate Charge Qg Max Vgs
- 19nC @ 10V
- Nominal Vgs
- 3 V
- Direnç
- 600mOhm
- Genişlik
- 6.2mm
- Turn Off Delay Time
- 32 ns
- Pin Sayısı
- 3
- Drain Currentmax Abs Id
- 8A
- JESD-609 Kodu
- e3
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Jesd30 Code
- R-PSSO-G2
- Vgs Max
- ±25V
- Radyasyon Dayanımı
- No
- Yükseklik
- 2.4mm
- Kurşunsuz
- Lead Free
- Operating Mode
- ENHANCEMENT MODE
- Seri
- MDmesh™ II
- Tepe Reflow Süresi (maks. sn)
- 30
- Tepe Reflow Sıcaklığı (°C)
- 260
- Fall Time Typ
- 15 ns
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 10A Tc
- Drive Voltage Max Rds On Min Rds On
- 10V
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Continuous Drain Current Id
- 10A
- Transistor Application
- SWITCHING
- Transistor Element Material
- SILICON
- Pin Sayısı
- 3
- Turn On Delay Time
- 10 ns
- Uzunluk
- 6.6mm
- Terminal Sayısı
- 2
- Fabrika Tedarik Süresi
- 16 Weeks
- Drain To Source Breakdown Voltage
- 600V
- Element Configuration
- Single
- ECCN Kodu
- EAR99
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