Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Dissipation
- 110W
- Transistor Element Material
- SILICON
- Fet Type
- N-Channel
- Vgsth Max Id
- 2.5V @ 250μA
- Direnç
- 4.5mOhm
- Operating Mode
- ENHANCEMENT MODE
- Turn Off Delay Time
- 31 ns
- Montaj
- Surface Mount
- Tepe Reflow Sıcaklığı (°C)
- 260
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Fall Time Typ
- 35 ns
- Temel Parça No
- STD10
- Ambalaj
- Tape & Reel (TR)
- Pin Sayısı
- 3
- Gate To Source Voltage Vgs
- 20V
- Avalanche Energy Rating Eas
- 500 mJ
- Lifecycle Status
- ACTIVE (Last Updated: 7 months ago)
- Drain To Source Breakdown Voltage
- 30V
- Turn On Delay Time
- 9 ns
- Power Dissipation Max
- 110W Tc
- Number Of Elements
- 1
- Element Configuration
- Single
- Vgs Max
- ±20V
- JESD-609 Kodu
- e3
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Pin Sayısı
- 3
- Gate Charge Qg Max Vgs
- 27nC @ 5V
- Terminal Formu
- GULL WING
- Terminal Kaplaması
- Matte Tin (Sn)
- ECCN Kodu
- EAR99
- Seri
- STripFET™ II
- Parça Durumu
- Active
- Terminal Sayısı
- 2
- Kurşunsuz
- Lead Free
- Rise Time
- 205ns
- Montaj Tipi
- Surface Mount
- Rds On Max Id Vgs
- 5.5m Ω @ 40A, 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
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