STB9NK60ZT4

Specifications

Akım Değeri

7A

Fet Type

N-Channel

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

JESD-609 Kodu

e3

Turn Off Delay Time

43 ns

Input Capacitance Ciss Max Vds

1110pF @ 25V

Gate To Source Voltage Vgs

30V

Fall Time Typ

15 ns

ECCN Kodu

EAR99

Continuous Drain Current Id

7A

Drain Currentmax Abs Id

7A

Power Dissipation Max

125W Tc

Jesd30 Code

R-PSSO-G2

Direnç

950mOhm

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

7A Tc

Yükseklik

4.6mm

Terminal Kaplaması

Matte Tin (Sn) - annealed

Çalışma Sıcaklığı

-55°C~150°C TJ

Radyasyon Dayanımı

No

Ambalaj

Tape & Reel (TR)

Genişlik

9.35mm

Threshold Voltage

3.75V

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

28A

Operating Mode

ENHANCEMENT MODE

Seri

SuperMESH™

Vgs Max

±30V

Power Dissipation

125W

Tepe Reflow Süresi (maks. sn)

30

Rds On Max Id Vgs

950m Ω @ 3.5A, 10V

Drain To Source Breakdown Voltage

600V

Kurşunsuz

Lead Free

Pin Sayısı

3

Montaj

Surface Mount

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Tepe Reflow Sıcaklığı (°C)

245