Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Temel Parça No
- STB85N
- Ambalaj
- Tape & Reel (TR)
- Turn On Delay Time
- 22 ns
- Gate Charge Qg Max Vgs
- 40nC @ 4.5V
- Montaj Tipi
- Surface Mount
- Terminal Sayısı
- 2
- Transistor Application
- SWITCHING
- Terminal Formu
- GULL WING
- Operating Mode
- ENHANCEMENT MODE
- Number Of Elements
- 1
- Element Configuration
- Single
- Transistor Element Material
- SILICON
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Direnç
- 8mOhm
- Vgsth Max Id
- 1V @ 250μA
- Power Dissipation Max
- 110W Tc
- Jesd30 Code
- R-PSSO-G2
- Voltage Rated Dc
- 30V
- Terminal Kaplaması
- Matte Tin (Sn) - annealed
- Rise Time
- 130ns
- Çalışma Sıcaklığı
- -65°C~175°C TJ
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 85A Tc
- Pin Sayısı
- 3
- Fall Time Typ
- 36.5 ns
- Montaj
- Surface Mount
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Kurşunsuz
- Lead Free
- Gate To Source Voltage Vgs
- 16V
- Continuous Drain Current Id
- 85A
- ECCN Kodu
- EAR99
- Kurşunsuz Kodu
- yes
- Tepe Reflow Sıcaklığı (°C)
- 245
- Pin Sayısı
- 3
- Akım Değeri
- 85A
- Fet Type
- N-Channel
- Tepe Reflow Süresi (maks. sn)
- 30
- Power Dissipation
- 110W
- Vgs Max
- ±16V
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