STB80NF55L-08-1

Specifications

Pin Sayısı

3

ECCN Kodu

EAR99

Continuous Drain Current Id

80A

Gate To Source Voltage Vgs

16V

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Montaj

Through Hole

Fall Time Typ

65 ns

Pin Sayısı

3

Rds On Max Id Vgs

8m Ω @ 40A, 10V

Drain To Source Breakdown Voltage

55V

Parça Durumu

Obsolete

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn Off Delay Time

85 ns

Additional Feature

LOGIC LEVEL COMPATIBLE

Input Capacitance Ciss Max Vds

4350pF @ 25V

JESD-609 Kodu

e3

Power Dissipation

300W

Vgs Max

±16V

Seri

STripFET™ II

Fet Type

N-Channel

Transistor Element Material

SILICON

Number Of Elements

1

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Avalanche Energy Rating Eas

870 mJ

Terminal Sayısı

3

Montaj Tipi

Through Hole

Gate Charge Qg Max Vgs

100nC @ 4.5V

Turn On Delay Time

35 ns

Ambalaj

Tube

Temel Parça No

STB80N

Radyasyon Dayanımı

No

Current Continuous Drain Id25

80A Tc

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

175°C TJ

Rise Time

145ns

Terminal Kaplaması

Matte Tin (Sn)

Power Dissipation Max

300W Tc

Vgsth Max Id

2.5V @ 250μA