STB80NF55-06-1

Specifications

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

80A Tc

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Drainsource On Resistancemax

0.0065Ohm

Çalışma Sıcaklığı

-55°C~175°C TJ

Rise Time

155ns

Terminal Kaplaması

Matte Tin (Sn)

Power Dissipation Max

300W Tc

Vgsth Max Id

4V @ 250μA

Drive Voltage Max Rds On Min Rds On

10V

Element Configuration

Single

Number Of Elements

1

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Terminal Sayısı

3

Montaj Tipi

Through Hole

Gate Charge Qg Max Vgs

189nC @ 10V

Temel Parça No

STB80N

Ambalaj

Tube

Turn On Delay Time

27 ns

Fabrika Tedarik Süresi

12 Weeks

Radyasyon Dayanımı

No

Drain To Source Breakdown Voltage

55V

Rds On Max Id Vgs

6.5m Ω @ 40A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Turn Off Delay Time

125 ns

Input Capacitance Ciss Max Vds

4400pF @ 25V

JESD-609 Kodu

e3

Seri

STripFET™ II

Case Connection

DRAIN

Vgs Max

±20V

Power Dissipation

300W

Fet Type

N-Channel

Pin Sayısı

3

Continuous Drain Current Id

80A

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

20V

Montaj

Through Hole