STB76NF75

Specifications

Gate To Source Voltage Vgs

20V

Kurşunsuz

Lead Free

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Montaj

Surface Mount

Fall Time Typ

30 ns

Pin Sayısı

3

Pin Sayısı

4

Tepe Reflow Sıcaklığı (°C)

245

ECCN Kodu

EAR99

Continuous Drain Current Id

80A

Seri

STripFET™ II

Case Connection

DRAIN

Vgs Max

±20V

Power Dissipation

300W

Fet Type

N-Channel

Rds On Max Id Vgs

11m Ω @ 40A, 10V

Drain To Source Breakdown Voltage

75V

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn Off Delay Time

66 ns

Input Capacitance Ciss Max Vds

3700pF @ 25V

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

160nC @ 10V

Turn On Delay Time

25 ns

Ambalaj

Tape & Reel (TR)

Temel Parça No

STB76N

Radyasyon Dayanımı

No

Fabrika Tedarik Süresi

12 Weeks

Transistor Element Material

SILICON

Number Of Elements

1

Element Configuration

Single

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Avalanche Energy Rating Eas

700 mJ

Terminal Sayısı

2

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

300W Tc

Vgsth Max Id

4V @ 250μA