STB6NK60Z-1

Specifications

Gate Charge Qg Max Vgs

46nC @ 10V

Montaj Tipi

Through Hole

Radyasyon Dayanımı

No

Temel Parça No

STB6N

Ambalaj

Tube

Turn On Delay Time

14 ns

Transistor Element Material

SILICON

Number Of Elements

1

Element Configuration

Single

Avalanche Energy Rating Eas

210 mJ

Terminal Sayısı

3

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

24A

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

110W Tc

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4.5V @ 100μA

Direnç

1.2Ohm

RoHS Durumu

ROHS3 Compliant

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Current Continuous Drain Id25

6A Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

14ns

Terminal Kaplaması

Tin (Sn)

Gate To Source Voltage Vgs

30V

Kurşunsuz

Lead Free

Pin Sayısı

3

Fall Time Typ

19 ns

Montaj

Through Hole

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Pin Sayısı

3

ECCN Kodu

EAR99

Continuous Drain Current Id

6A

Drain Currentmax Abs Id

6A

Power Dissipation

110W

Seri

SuperMESH™

Fet Type

N-Channel

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Not For New Designs

Rds On Max Id Vgs

1.2 Ω @ 3A, 10V