STB6N80K5

Specifications

Number Of Channels

1

Fet Type

N-Channel

Case Connection

DRAIN

Seri

SuperMESH5™

Input Capacitance Ciss Max Vds

255pF @ 100V

Parça Durumu

Active

Weight

3.949996g

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

1.6 Ω @ 2A, 10V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Montaj

Surface Mount

Kurşunsuz

Lead Free

Gate To Source Voltage Vgs

30V

Drain To Source Voltage Vdss

800V

ECCN Kodu

EAR99

Continuous Drain Current Id

4.5A

Ds Breakdown Voltagemin

800V

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

5V @ 100μA

Power Dissipation Max

85W Tc

Jesd30 Code

R-PSSO-G2

Çalışma Sıcaklığı

-55°C~150°C TJ

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Current Continuous Drain Id25

4.5A Tc

RoHS Durumu

ROHS3 Compliant

Fabrika Tedarik Süresi

26 Weeks

Temel Parça No

STB6N

Ambalaj

Cut Tape (CT)

Gate Charge Qg Max Vgs

7.5nC @ 10V

Montaj Tipi

Surface Mount

Terminal Sayısı

2

Avalanche Energy Rating Eas

85 mJ

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Element Configuration

Single

Number Of Elements

1

Transistor Element Material

SILICON