STB60N55F3

Specifications

Pin Sayısı

3

Dual Supply Voltage

55V

Tepe Reflow Sıcaklığı (°C)

245

Kurşunsuz Kodu

yes

Kurşunsuz

Lead Free

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Montaj

Surface Mount

Pin Sayısı

3

Rds On Max Id Vgs

8.5m Ω @ 32A, 10V

Drain To Source Breakdown Voltage

55V

Seri

STripFET™ III

Vgs Max

±20V

Power Dissipation

110W

Tepe Reflow Süresi (maks. sn)

30

Element Configuration

Single

Number Of Elements

1

Terminal Sayısı

2

Reach Svhc

No SVHC

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

45nC @ 10V

Turn On Delay Time

20 ns

Temel Parça No

STB60N

Rise Time

50ns

Vgsth Max Id

4V @ 250μA

Uzunluk

10.75mm

Drive Voltage Max Rds On Min Rds On

10V

Continuous Drain Current Id

80A

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

20V

Fall Time Typ

11.5 ns

Nominal Vgs

4 V

Parça Durumu

Obsolete

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

2200pF @ 25V

Turn Off Delay Time

35 ns

JESD-609 Kodu

e3

Terminal

SMD/SMT

Case Connection

DRAIN

Fet Type

N-Channel

Transistor Element Material

SILICON