STB5NK52ZD-1

Specifications

Parça Durumu

Obsolete

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

520V

Rds On Max Id Vgs

1.5 Ω @ 2.2A, 10V

Turn Off Delay Time

23.1 ns

Additional Feature

AVALANCHE RATED

Input Capacitance Ciss Max Vds

529pF @ 25V

Vgs Max

±30V

Seri

SuperMESH™

Power Dissipation

70W

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fet Type

N-Channel

Qualification Status

Not Qualified

Pin Sayısı

3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Continuous Drain Current Id

4.4A

Gate To Source Voltage Vgs

30V

REACH Uyumluluk Kodu

unknown

Fall Time Typ

15 ns

Pin Sayısı

3

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Montaj

Through Hole

Current Continuous Drain Id25

4.4A Tc

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

13.6ns

Power Dissipation Max

70W Tc

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4.5V @ 50μA

Transistor Element Material

SILICON

Number Of Elements

1

Element Configuration

Single

Avalanche Energy Rating Eas

170 mJ

Terminal Sayısı

3

Pulsed Drain Currentmax Idm

17.6A

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Gate Charge Qg Max Vgs

16.9nC @ 10V

Montaj Tipi

Through Hole

Temel Parça No

STB5N