STB4N62K3

Specifications

Fet Type

N-Channel

Power Dissipation

70W

Vgs Max

±30V

Seri

SuperMESH3™

Input Capacitance Ciss Max Vds

450pF @ 50V

Turn Off Delay Time

29 ns

Drain To Source Breakdown Voltage

620V

Rds On Max Id Vgs

1.95 Ω @ 1.9A, 10V

Parça Durumu

Obsolete

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Montaj

Surface Mount

Fall Time Typ

19 ns

Kurşunsuz

Lead Free

Gate To Source Voltage Vgs

30V

Kurşunsuz Kodu

yes

Continuous Drain Current Id

3.8A

ECCN Kodu

EAR99

Pin Sayısı

4

Vgsth Max Id

4.5V @ 50μA

Direnç

1.95Ohm

Drive Voltage Max Rds On Min Rds On

10V

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

70W Tc

Rise Time

9ns

Çalışma Sıcaklığı

150°C TJ

Current Continuous Drain Id25

3.8A Tc

RoHS Durumu

ROHS3 Compliant

Turn On Delay Time

10 ns

Ambalaj

Cut Tape (CT)

Temel Parça No

STB4N

Radyasyon Dayanımı

No

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

14nC @ 10V

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Terminal Sayısı

2

Element Configuration

Single

Number Of Elements

1