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STB46N30M5

STMicroelectronics

STB46N30M5

Single MOSFETs Transistors

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Montaj Tipi
Surface Mount
Gate Charge Qg Max Vgs
95nC @ 10V
Temel Parça No
STB46N
Ambalaj
Cut Tape (CT)
Fabrika Tedarik Süresi
17 Weeks
Transistor Element Material
SILICON
Number Of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Terminal Formu
GULL WING
Pulsed Drain Currentmax Idm
212A
Operating Mode
ENHANCEMENT MODE
Transistor Application
SWITCHING
Avalanche Energy Rating Eas
550 mJ
Terminal Sayısı
2
Jesd30 Code
R-PSSO-G2
Terminal Pozisyonu
SINGLE
Power Dissipation Max
250W Tc
Vgsth Max Id
5V @ 250μA
Drive Voltage Max Rds On Min Rds On
10V
Current Continuous Drain Id25
53A Tc
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
RoHS Durumu
ROHS3 Compliant
Çalışma Sıcaklığı
150°C TJ
Drainsource On Resistancemax
0.04Ohm
Drain To Source Voltage Vdss
300V
Kılıf / Paket
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Montaj
Surface Mount
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Ds Breakdown Voltagemin
300V
ECCN Kodu
EAR99
Continuous Drain Current Id
53A
Case Connection
DRAIN
Seri
Automotive, AEC-Q101, MDmesh™ V
Vgs Max
±25V
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Fet Type
N-Channel
Rds On Max Id Vgs
40m Ω @ 26.5A, 10V
Parça Durumu
Active
Nem Hassasiyeti (MSL)
1 (Unlimited)
Input Capacitance Ciss Max Vds
4240pF @ 100V

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