STB40N60M2

Specifications

Input Capacitance Ciss Max Vds

2500pF @ 100V

Turn Off Delay Time

96 ns

Parça Durumu

Active

Weight

3.949996g

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

88m Ω @ 17A, 10V

Number Of Channels

1

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgs Max

±25V

Case Connection

DRAIN

Seri

MDmesh™ II Plus

Continuous Drain Current Id

34A

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

600V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fall Time Typ

11 ns

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Montaj

Surface Mount

Kurşunsuz

Lead Free

Gate To Source Voltage Vgs

25V

Drain To Source Voltage Vdss

600V

Rise Time

13.5ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Drainsource On Resistancemax

0.088Ohm

Current Continuous Drain Id25

34A Tc

RoHS Durumu

ROHS3 Compliant

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4V @ 250μA

Power Dissipation Max

250W Tc

Jesd30 Code

R-PSSO-G2

Terminal Sayısı

2

Avalanche Energy Rating Eas

500 mJ

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Contact Plating

Tin

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Element Configuration

Single

Number Of Elements

1