STB38N65M5

Specifications

Tepe Reflow Sıcaklığı (°C)

245

Kurşunsuz

Lead Free

Pin Sayısı

3

Montaj

Surface Mount

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain To Source Breakdown Voltage

650V

Rds On Max Id Vgs

95m Ω @ 15A, 10V

Power Dissipation

190W

Vgs Max

±25V

Seri

MDmesh™ V

Tepe Reflow Süresi (maks. sn)

30

Element Configuration

Single

Number Of Elements

1

Terminal Sayısı

3

Gate Charge Qg Max Vgs

71nC @ 10V

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

17 Weeks

Temel Parça No

STB38N

Turn On Delay Time

66 ns

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Rise Time

9ns

Uzunluk

10.4mm

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

5V @ 250μA

ECCN Kodu

EAR99

Continuous Drain Current Id

30A

Gate To Source Voltage Vgs

25V

Jedec95 Code

TO-220AB

Fall Time Typ

9 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

JESD-609 Kodu

e3

Turn Off Delay Time

66 ns

Input Capacitance Ciss Max Vds

3000pF @ 100V

Case Connection

ISOLATED

Fet Type

N-Channel

Transistor Element Material

SILICON

Avalanche Energy Rating Eas

660 mJ

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE