STB37N60DM2AG

Specifications

Transistor Element Material

SILICON

Number Of Elements

1

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

112A

Operating Mode

ENHANCEMENT MODE

Avalanche Energy Rating Eas

650 mJ

Terminal Sayısı

2

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

54nC @ 10V

Temel Parça No

STB37N

Ambalaj

Tape & Reel (TR)

Fabrika Tedarik Süresi

17 Weeks

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

28A Tc

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Drainsource On Resistancemax

0.11Ohm

Çalışma Sıcaklığı

-55°C~150°C TJ

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

210W Tc

Terminal Pozisyonu

SINGLE

Vgsth Max Id

5V @ 250μA

Drive Voltage Max Rds On Min Rds On

10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ds Breakdown Voltagemin

600V

ECCN Kodu

EAR99

Continuous Drain Current Id

28A

Drain To Source Voltage Vdss

600V

Montaj

Surface Mount

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On Max Id Vgs

110m Ω @ 14A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Input Capacitance Ciss Max Vds

2400pF @ 100V

Case Connection

DRAIN

Seri

Automotive, AEC-Q101, MDmesh™ DM2

Vgs Max

±25V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fet Type

N-Channel