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STB36NM60ND

STMicroelectronics

STB36NM60ND

Single MOSFETs Transistors

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Montaj Tipi
Surface Mount
Gate Charge Qg Max Vgs
80.4nC @ 10V
Turn On Delay Time
30 ns
Genişlik
9.35mm
Ambalaj
Cut Tape (CT)
Temel Parça No
STB36N
Fabrika Tedarik Süresi
26 Weeks
Element Configuration
Single
Power Dissipation Max
190W Tc
Direnç
110mOhm
Vgsth Max Id
5V @ 250μA
Drive Voltage Max Rds On Min Rds On
10V
Uzunluk
10.4mm
Current Continuous Drain Id25
29A Tc
Yükseklik
4.6mm
RoHS Durumu
ROHS3 Compliant
Terminal Kaplaması
Matte Tin (Sn) - annealed
Rise Time
53.4ns
Çalışma Sıcaklığı
150°C TJ
REACH Uyumluluk Kodu
not_compliant
Kurşunsuz
Lead Free
Drain To Source Voltage Vdss
600V
Gate To Source Voltage Vgs
25V
Kılıf / Paket
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Montaj
Surface Mount
Fall Time Typ
61.8 ns
Pin Sayısı
3
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
ECCN Kodu
EAR99
Continuous Drain Current Id
29A
Power Dissipation
190W
Vgs Max
±25V
Seri
Automotive, AEC-Q101, FDmesh™ II
Number Of Channels
1
Fet Type
N-Channel
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Drain To Source Breakdown Voltage
650V
Rds On Max Id Vgs
110m Ω @ 14.5A, 10V
Parça Durumu
Active
Nem Hassasiyeti (MSL)
1 (Unlimited)

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