STB32N65M5

Specifications

Fabrika Tedarik Süresi

17 Weeks

Temel Parça No

STB32N

Turn On Delay Time

53 ns

Gate Charge Qg Max Vgs

72nC @ 10V

Montaj Tipi

Surface Mount

Reach Svhc

No SVHC

Terminal Sayısı

2

Number Of Elements

1

Element Configuration

Single

Drive Voltage Max Rds On Min Rds On

10V

Uzunluk

10.75mm

Vgsth Max Id

5V @ 250μA

Rise Time

12ns

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Pin Sayısı

3

Montaj

Surface Mount

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Kurşunsuz

Lead Free

Tepe Reflow Sıcaklığı (°C)

245

Pin Sayısı

4

Tepe Reflow Süresi (maks. sn)

30

Vgs Max

±25V

Seri

MDmesh™ V

Power Dissipation

150W

Additional Feature

AVALANCHE ENERGY RATED

Drain To Source Breakdown Voltage

650V

Rds On Max Id Vgs

119m Ω @ 12A, 10V

Radyasyon Dayanımı

No

Genişlik

10.4mm

Ambalaj

Cut Tape (CT)

Avalanche Energy Rating Eas

650 mJ

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

96A

Operating Mode

ENHANCEMENT MODE

Threshold Voltage

4V

Transistor Element Material

SILICON

Direnç

119MOhm

Power Dissipation Max

150W Tc

Jesd30 Code

R-PSSO-G2