STB30N65M5

Specifications

Rise Time

8ns

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Vgsth Max Id

5V @ 250μA

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

2

Element Configuration

Single

Number Of Elements

1

Turn On Delay Time

50 ns

Temel Parça No

STB30N

Fabrika Tedarik Süresi

17 Weeks

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

64nC @ 10V

Additional Feature

AVALANCHE ENERGY RATED

Drain To Source Breakdown Voltage

650V

Rds On Max Id Vgs

139m Ω @ 11A, 10V

Tepe Reflow Süresi (maks. sn)

30

Power Dissipation

140W

Vgs Max

±25V

Seri

MDmesh™ V

Pin Sayısı

4

Tepe Reflow Sıcaklığı (°C)

245

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Montaj

Surface Mount

Pin Sayısı

3

Kurşunsuz

Lead Free

Terminal Kaplaması

Matte Tin (Sn) - annealed

Çalışma Sıcaklığı

150°C TJ

Current Continuous Drain Id25

22A Tc

RoHS Durumu

ROHS3 Compliant

Direnç

139MOhm

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

140W Tc

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

88A

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Avalanche Energy Rating Eas

500 mJ

Transistor Element Material

SILICON

Ambalaj

Cut Tape (CT)

Radyasyon Dayanımı

No