STB28NM60ND

Specifications

Rise Time

21.5ns

Çalışma Sıcaklığı

150°C TJ

Yükseklik

4.6mm

Current Continuous Drain Id25

23A Tc

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

5V @ 250μA

Drive Voltage Max Rds On Min Rds On

10V

Uzunluk

10.4mm

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

190W Tc

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

92A

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Terminal Sayısı

2

Avalanche Energy Rating Eas

50 mJ

Transistor Element Material

SILICON

Element Configuration

Single

Number Of Elements

1

Turn On Delay Time

23.5 ns

Temel Parça No

STB28N

Ambalaj

Cut Tape (CT)

Genişlik

9.35mm

Radyasyon Dayanımı

No

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

62.5nC @ 10V

Input Capacitance Ciss Max Vds

2090pF @ 100V

Turn Off Delay Time

92 ns

Drain To Source Breakdown Voltage

650V

Rds On Max Id Vgs

150m Ω @ 11.5A, 10V

Parça Durumu

Active

Weight

3.949996g

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Channels

1

Fet Type

N-Channel

Vgs Max

±25V

Case Connection

DRAIN

Seri

FDmesh™ II

Continuous Drain Current Id

23A

ECCN Kodu

EAR99