STB28N60M2

Specifications

Rise Time

7.2ns

Çalışma Sıcaklığı

-55°C~150°C TJ

RoHS Durumu

ROHS3 Compliant

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Current Continuous Drain Id25

22A Tc

Vgsth Max Id

4V @ 250μA

Drive Voltage Max Rds On Min Rds On

10V

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

170W Tc

Transistor Application

SWITCHING

Contact Plating

Tin

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

88A

Terminal Sayısı

2

Avalanche Energy Rating Eas

350 mJ

Element Configuration

Single

Number Of Elements

1

Transistor Element Material

SILICON

Temel Parça No

STB28N

Ambalaj

Cut Tape (CT)

Turn On Delay Time

14.5 ns

Fabrika Tedarik Süresi

26 Weeks

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

36nC @ 10V

Input Capacitance Ciss Max Vds

1440pF @ 100V

Turn Off Delay Time

100 ns

Drain To Source Breakdown Voltage

600V

Rds On Max Id Vgs

150m Ω @ 11A, 10V

Weight

3.949996g

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Fet Type

N-Channel

Number Of Channels

1

Vgs Max

±25V

Case Connection

DRAIN

Seri

MDmesh™ II Plus

Continuous Drain Current Id

22A

ECCN Kodu

EAR99

Montaj

Surface Mount