Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Rise Time
- 16.5ns
- Uzunluk
- 10.75mm
- Drive Voltage Max Rds On Min Rds On
- 10V
- Vgsth Max Id
- 4V @ 250μA
- Element Configuration
- Single
- Number Of Elements
- 1
- Terminal Sayısı
- 2
- Contact Plating
- Tin
- Gate Charge Qg Max Vgs
- 46nC @ 10V
- Reach Svhc
- No SVHC
- Montaj Tipi
- Surface Mount
- Fabrika Tedarik Süresi
- 26 Weeks
- Turn On Delay Time
- 11.5 ns
- Temel Parça No
- STB24N
- Drain To Source Breakdown Voltage
- 600V
- Rds On Max Id Vgs
- 190m Ω @ 8A, 10V
- Seri
- MDmesh™ II
- Vgs Max
- ±30V
- Power Dissipation
- 125W
- Pin Sayısı
- 4
- Kurşunsuz
- Lead Free
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Montaj
- Surface Mount
- Current Continuous Drain Id25
- 17A Tc
- Yükseklik
- 4.6mm
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Power Dissipation Max
- 125W Tc
- Jesd30 Code
- R-PSSO-G2
- Direnç
- 190MOhm
- Threshold Voltage
- 3V
- Transistor Element Material
- SILICON
- Operating Mode
- ENHANCEMENT MODE
- Pulsed Drain Currentmax Idm
- 68A
- Terminal Formu
- GULL WING
- Transistor Application
- SWITCHING
- Radyasyon Dayanımı
- No
- Genişlik
- 10.4mm
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