STB24N60M2

Specifications

Yükseklik

4.6mm

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Current Continuous Drain Id25

18A Tc

RoHS Durumu

ROHS3 Compliant

Rise Time

9ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

150W Tc

Uzunluk

10.4mm

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4V @ 250μA

Direnç

190mOhm

Transistor Element Material

SILICON

Element Configuration

Single

Number Of Elements

1

Terminal Sayısı

3

Avalanche Energy Rating Eas

180 mJ

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

72A

Terminal Formu

THROUGH-HOLE

Transistor Application

SWITCHING

Gate Charge Qg Max Vgs

29nC @ 10V

Montaj Tipi

Surface Mount

Radyasyon Dayanımı

No

Fabrika Tedarik Süresi

26 Weeks

Turn On Delay Time

14 ns

Genişlik

9.35mm

Ambalaj

Cut Tape (CT)

Temel Parça No

STB24N

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

600V

Rds On Max Id Vgs

190m Ω @ 9A, 10V

Input Capacitance Ciss Max Vds

1060pF @ 100V

Turn Off Delay Time

15 ns

Power Dissipation

150W

Vgs Max

±25V

Case Connection

DRAIN

Seri

MDmesh™ II Plus

Fet Type

N-Channel

Continuous Drain Current Id

18A