Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Uzunluk
- 10.75mm
- Drive Voltage Max Rds On Min Rds On
- 10V
- Vgsth Max Id
- 5V @ 250μA
- Rise Time
- 45ns
- Temel Parça No
- STB23N
- Turn On Delay Time
- 21 ns
- Gate Charge Qg Max Vgs
- 70nC @ 10V
- Montaj Tipi
- Surface Mount
- Reach Svhc
- No SVHC
- Terminal Sayısı
- 2
- Element Configuration
- Single
- Number Of Elements
- 1
- Power Dissipation
- 150W
- Vgs Max
- ±25V
- Seri
- FDmesh™ II
- Drain To Source Breakdown Voltage
- 600V
- Rds On Max Id Vgs
- 180m Ω @ 10A, 10V
- Pin Sayısı
- 3
- Montaj
- Surface Mount
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Kurşunsuz
- Lead Free
- Pin Sayısı
- 4
- Power Dissipation Max
- 150W Tc
- Jesd30 Code
- R-PSSO-G2
- Çalışma Sıcaklığı
- 150°C TJ
- Terminal Kaplaması
- Matte Tin (Sn) - annealed
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 19.5A Tc
- Yükseklik
- 4.6mm
- Radyasyon Dayanımı
- No
- Genişlik
- 10.4mm
- Ambalaj
- Tape & Reel (TR)
- Avalanche Energy Rating Eas
- 700 mJ
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- Pulsed Drain Currentmax Idm
- 78A
- Terminal Formu
- GULL WING
- Threshold Voltage
- 4V
- Transistor Element Material
- SILICON
- Fet Type
- N-Channel
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