Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
- Element Configuration
- Single
- Terminal Sayısı
- 2
- Avalanche Energy Rating Eas
- 700 mJ
- Terminal Formu
- GULL WING
- Pulsed Drain Currentmax Idm
- 80A
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- Contact Plating
- Tin
- Gate Charge Qg Max Vgs
- 52nC @ 10V
- Montaj Tipi
- Surface Mount
- Radyasyon Dayanımı
- No
- Fabrika Tedarik Süresi
- 26 Weeks
- Turn On Delay Time
- 25 ns
- Temel Parça No
- STB20N
- Ambalaj
- Tape & Reel (TR)
- Current Continuous Drain Id25
- 20A Tc
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -65°C~150°C TJ
- Rise Time
- 12ns
- Power Dissipation Max
- 192W Tc
- Jesd30 Code
- R-PSSO-G2
- Drive Voltage Max Rds On Min Rds On
- 10V
- Vgsth Max Id
- 5V @ 250μA
- Direnç
- 290mOhm
- Pin Sayısı
- 3
- Tepe Reflow Sıcaklığı (°C)
- 245
- ECCN Kodu
- EAR99
- Continuous Drain Current Id
- 20A
- Kurşunsuz
- Lead Free
- Gate To Source Voltage Vgs
- 30V
- Fall Time Typ
- 22 ns
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Montaj
- Surface Mount
- Parça Durumu
- Active
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rds On Max Id Vgs
- 290m Ω @ 10A, 10V
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