STB20N90K5

Specifications

RoHS Durumu

RoHS Compliant

Current Continuous Drain Id25

20A Tc

Yüzey Montaj

YES

Drainsource On Resistancemax

0.25Ohm

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

250W Tc

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSSO-G2

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

5V @ 100μA

Configuration

SINGLE WITH BUILT-IN DIODE

Number Of Elements

1

Transistor Element Material

SILICON

Terminal Sayısı

2

Avalanche Energy Rating Eas

500 mJ

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

80A

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

40nC @ 10V

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

26 Weeks

Ambalaj

Tape & Reel (TR)

Temel Parça No

STB20N

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Rds On Max Id Vgs

250m Ω @ 10A, 10V

Input Capacitance Ciss Max Vds

1500pF @ 100V

Vgs Max

±30V

Case Connection

DRAIN

Seri

MDmesh™

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drain Currentmax Abs Id

20A

Ds Breakdown Voltagemin

900V

Drain To Source Voltage Vdss

900V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB