STB20N65M5

Specifications

Input Capacitance Ciss Max Vds

1434pF @ 100V

Rds On Max Id Vgs

190m Ω @ 9A, 10V

Drain To Source Breakdown Voltage

710V

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Type

N-Channel

Vgs Max

±25V

Case Connection

DRAIN

Seri

MDmesh™ V

Continuous Drain Current Id

18A

ECCN Kodu

EAR99

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Montaj

Surface Mount

Fall Time Typ

7.5 ns

Pin Sayısı

3

Kurşunsuz

Lead Free

Drain To Source Voltage Vdss

650V

Gate To Source Voltage Vgs

25V

Çalışma Sıcaklığı

150°C TJ

Rise Time

7.5ns

Current Continuous Drain Id25

18A Tc

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

5V @ 250μA

Direnç

190MOhm

Drive Voltage Max Rds On Min Rds On

10V

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

130W Tc

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

72A

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Avalanche Energy Rating Eas

270 mJ

Terminal Sayısı

2

Transistor Element Material

SILICON

Number Of Elements

1

Element Configuration

Single

Ambalaj

Tape & Reel (TR)

Temel Parça No

STB20N

Radyasyon Dayanımı

No