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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Rise Time
- 320ns
- Uzunluk
- 10.4mm
- Drive Voltage Max Rds On Min Rds On
- 10V
- Vgsth Max Id
- 4V @ 250μA
- Voltage Rated Dc
- 40V
- Terminal Sayısı
- 2
- Element Configuration
- Single
- Number Of Elements
- 1
- Turn On Delay Time
- 30 ns
- Temel Parça No
- STB200N
- Gate Charge Qg Max Vgs
- 210nC @ 10V
- Montaj Tipi
- Surface Mount
- Rds On Max Id Vgs
- 3.7m Ω @ 90A, 10V
- Drain To Source Breakdown Voltage
- 40V
- Tepe Reflow Süresi (maks. sn)
- 30
- Seri
- STripFET™ II
- Vgs Max
- ±20V
- Power Dissipation
- 310W
- Kurşunsuz Kodu
- yes
- Pin Sayısı
- 3
- Tepe Reflow Sıcaklığı (°C)
- 245
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Montaj
- Surface Mount
- Kurşunsuz
- Lead Free
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Terminal Kaplaması
- Matte Tin (Sn) - annealed
- Yükseklik
- 4.6mm
- Current Continuous Drain Id25
- 120A Tc
- RoHS Durumu
- ROHS3 Compliant
- Direnç
- 3.7MOhm
- Power Dissipation Max
- 310W Tc
- Jesd30 Code
- R-PSSO-G2
- Operating Mode
- ENHANCEMENT MODE
- Pulsed Drain Currentmax Idm
- 480A
- Terminal Formu
- GULL WING
- Transistor Application
- SWITCHING
- Transistor Element Material
- SILICON
- Radyasyon Dayanımı
- No
- Ambalaj
- Cut Tape (CT)
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