STB200NF03T4

Specifications

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Kaplaması

Matte Tin (Sn)

Current Continuous Drain Id25

120A Tc

Yükseklik

4.6mm

RoHS Durumu

ROHS3 Compliant

Power Dissipation Max

300W Tc

Jesd30 Code

R-PSSO-G2

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

480A

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Threshold Voltage

4V

Transistor Element Material

SILICON

Radyasyon Dayanımı

No

Ambalaj

Tape & Reel (TR)

Genişlik

9.35mm

JESD-609 Kodu

e3

Turn Off Delay Time

75 ns

Input Capacitance Ciss Max Vds

4950pF @ 25V

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Nominal Vgs

4 V

Akım Değeri

120A

Fet Type

N-Channel

Terminal

SMD/SMT

Case Connection

DRAIN

Continuous Drain Current Id

60A

ECCN Kodu

EAR99

Fall Time Typ

60 ns

Gate To Source Voltage Vgs

20V

Rise Time

195ns

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Uzunluk

10.4mm

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4V @ 250μA

Voltage Rated Dc

30V

Terminal Sayısı

2

Number Of Elements

1

Element Configuration

Single

Fabrika Tedarik Süresi

12 Weeks