STB18NF25

Specifications

Gate Charge Qg Max Vgs

29.5nC @ 10V

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

12 Weeks

Turn On Delay Time

8.8 ns

Temel Parça No

STB18N

Number Of Elements

1

Element Configuration

Single

Terminal Sayısı

2

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4V @ 250μA

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Rise Time

17.2ns

Kurşunsuz

Lead Free

Pin Sayısı

3

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Montaj

Surface Mount

Pin Sayısı

4

Tepe Reflow Sıcaklığı (°C)

245

Power Dissipation

110W

Vgs Max

±20V

Seri

Automotive, AEC-Q101, STripFET™ II

Tepe Reflow Süresi (maks. sn)

30

Rds On Max Id Vgs

165m Ω @ 8.5A, 10V

Drain To Source Breakdown Voltage

250V

Radyasyon Dayanımı

No

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Avalanche Energy Rating Eas

54 mJ

Pulsed Drain Currentmax Idm

68A

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Power Dissipation Max

110W Tc

Jesd30 Code

R-PSSO-G2

Direnç

165MOhm

Current Continuous Drain Id25

17A Tc

RoHS Durumu

ROHS3 Compliant

Terminal Kaplaması

Matte Tin (Sn) - annealed

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V