STB18N65M5

Specifications

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

31nC @ 10V

Temel Parça No

STB18N

Turn On Delay Time

36 ns

Fabrika Tedarik Süresi

17 Weeks

Number Of Elements

1

Element Configuration

Single

Terminal Sayısı

2

Vgsth Max Id

5V @ 250μA

Uzunluk

10.4mm

Drive Voltage Max Rds On Min Rds On

10V

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Rise Time

7ns

Kurşunsuz

Lead Free

Montaj

Surface Mount

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Sayısı

3

Seri

MDmesh™ V

Vgs Max

±25V

Power Dissipation

110W

Rds On Max Id Vgs

220m Ω @ 7.5A, 10V

Drain To Source Breakdown Voltage

650V

Genişlik

9.35mm

Ambalaj

Tape & Reel (TR)

Radyasyon Dayanımı

No

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

60A

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

110W Tc

Direnç

220mOhm

RoHS Durumu

ROHS3 Compliant

Yükseklik

4.6mm

Current Continuous Drain Id25

15A Tc

Çalışma Sıcaklığı

150°C TJ

Terminal Kaplaması

Matte Tin (Sn)

Gate To Source Voltage Vgs

25V

Fall Time Typ

9 ns