STB18N60M2

Specifications

Fall Time Typ

10.6 ns

Pin Sayısı

3

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Montaj

Surface Mount

Kurşunsuz

Lead Free

Drain To Source Voltage Vdss

600V

Gate To Source Voltage Vgs

25V

Continuous Drain Current Id

13A

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

600V

Number Of Channels

1

Fet Type

N-Channel

Case Connection

DRAIN

Seri

MDmesh™ II Plus

Vgs Max

±25V

Power Dissipation

110W

Turn Off Delay Time

47 ns

Input Capacitance Ciss Max Vds

791pF @ 100V

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

280m Ω @ 6.5A, 10V

Radyasyon Dayanımı

No

Fabrika Tedarik Süresi

26 Weeks

Turn On Delay Time

12 ns

Temel Parça No

STB18N

Ambalaj

Tape & Reel (TR)

Genişlik

9.35mm

Gate Charge Qg Max Vgs

21.5nC @ 10V

Montaj Tipi

Surface Mount

Terminal Sayısı

2

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

52A

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Number Of Elements

1

Element Configuration

Single

Uzunluk

10.4mm

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4V @ 250μA