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Specifications
- Number Of Elements
- 1
- Element Configuration
- Single
- Terminal Sayısı
- 2
- Gate Charge Qg Max Vgs
- 190nC @ 10V
- Reach Svhc
- No SVHC
- Montaj Tipi
- Surface Mount
- Fabrika Tedarik Süresi
- 12 Weeks
- Turn On Delay Time
- 35 ns
- Temel Parça No
- STB150N
- Lifecycle Status
- ACTIVE (Last Updated: 7 months ago)
- Rise Time
- 180ns
- Voltage Rated Dc
- 55V
- Uzunluk
- 6.35mm
- Drive Voltage Max Rds On Min Rds On
- 10V
- Vgsth Max Id
- 4V @ 250μA
- Dual Supply Voltage
- 55V
- Pin Sayısı
- 3
- Tepe Reflow Sıcaklığı (°C)
- 245
- Kurşunsuz
- Lead Free
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Montaj
- Surface Mount
- Drain To Source Breakdown Voltage
- 55V
- Rds On Max Id Vgs
- 6m Ω @ 60A, 10V
- Power Dissipation
- 300W
- Vgs Max
- ±20V
- Seri
- STripFET™ II
- Tepe Reflow Süresi (maks. sn)
- 30
- Threshold Voltage
- 4V
- Transistor Element Material
- SILICON
- Avalanche Energy Rating Eas
- 850 mJ
- Terminal Formu
- GULL WING
- Pulsed Drain Currentmax Idm
- 480A
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- Radyasyon Dayanımı
- No
- Genişlik
- 6.35mm
- Ambalaj
- Tape & Reel (TR)
- Yükseklik
- 6.35mm
- Current Continuous Drain Id25
- 120A Tc
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