STB14NM50N

Specifications

Terminal Kaplaması

Matte Tin (Sn) - annealed

Çalışma Sıcaklığı

150°C TJ

Current Continuous Drain Id25

12A Tc

Yükseklik

4.6mm

RoHS Durumu

ROHS3 Compliant

Direnç

320mOhm

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

90W Tc

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

48A

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Threshold Voltage

3V

Genişlik

10.4mm

Ambalaj

Cut Tape (CT)

Radyasyon Dayanımı

No

Turn Off Delay Time

42 ns

Input Capacitance Ciss Max Vds

816pF @ 50V

JESD-609 Kodu

e3

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Type

N-Channel

Case Connection

DRAIN

Continuous Drain Current Id

12A

ECCN Kodu

EAR99

Fall Time Typ

32 ns

Gate To Source Voltage Vgs

25V

Rise Time

9ns

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Vgsth Max Id

4V @ 100μA

Uzunluk

10.75mm

Drive Voltage Max Rds On Min Rds On

10V

Terminal Pozisyonu

SINGLE

Terminal Sayısı

2

Element Configuration

Dual

Number Of Elements

1

Turn On Delay Time

10.2 ns

Temel Parça No

STB14N

Fabrika Tedarik Süresi

26 Weeks